The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Dec. 14, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ashim Dutta, Clifton Park, NY (US);

Michael Rizzolo, Delmar, NY (US);

Jon Slaughter, Slingerlands, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

An MRAM device is provided. The MRAM device includes a first dielectric cap layer formed on an underlying layer, a second dielectric cap layer formed on the first dielectric cap layer, the first dielectric cap layer including a lower-κ material than that of the second dielectric cap layer. The MRAM device also includes a bottom electrode contact (BEC) formed through the first dielectric cap layer and the second dielectric cap layer, an MRAM stack formed on the BEC, and wherein the second dielectric cap layer surrounds an upper portion of the BEC.


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