Semiconductor devices

Abstract

A semiconductor device includes a source structure, a plurality of gate electrodes on the source structure. The plurality of gate electrodes are stacked and spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction, and a channel structure in a channel hole extends through the plurality of gate electrodes and in the first direction, the channel structure including a first dielectric layer on a sidewall of the channel hole, a second dielectric layer on the first dielectric layer opposite the sidewall of the channel hole, a channel layer on the second dielectric layer opposite the sidewall of the channel hole, and a filling insulating layer on the channel layer opposite the sidewall of the channel hole, and further including a channel pad layer in a region including an upper end of the channel hole, wherein the second dielectric layer includes a ferroelectric material, and wherein the channel pad layer is in contact with an internal side surface of the first dielectric layer and covers an upper surface of the second dielectric layer, an upper surface of the channel layer, and an upper surface of the filling insulating layer.