The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Sep. 07, 2022
SK Hynix Inc., Gyeonggi-do, KR;
Dong Soo Kim, Gyeonggi-do, KR;
Se Han Kwon, Gyeonggi-do, KR;
SK hynix Inc., Gyeonggi-do, KR;
Abstract
A semiconductor device includes: a trench formed in a substrate; a gate dielectric layer covering sidewalls and a bottom surface of the trench; a first gate electrode gap-filling a bottom portion of the trench over the gate dielectric layer; a second gate electrode including a metal nitride which is the same as the first gate electrode over the first gate electrode and doped with a low work function adjusting element; a buffer layer covering a top surface of the second gate electrode and the gate dielectric layer exposed over second gate electrode; and a capping layer gap-filling the other portion of the trench over the buffer layer.