The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Mar. 14, 2023
Applicant:

Ampleon Netherlands B.v., Nijmegen, NL;

Inventors:

Junlei Zhao, Nijmegen, NL;

Yi Zhu, Nijmegen, NL;

Radjindrepersad Gajadharsing, Nijmegen, NL;

Assignee:

Ampleon Netherlands B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/21 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H03F 1/0288 (2013.01); H03F 2200/451 (2013.01);
Abstract

Example embodiments relate to Doherty amplifiers. One example includes a radiofrequency (RF) power amplifier. The RF power amplifier includes an input lead. The RF power amplifier also includes a first output lead. Additionally, the RF power amplifier includes a first semiconductor die arranged in between the input lead and the first output lead. The first semiconductor die includes a first edge arranged adjacent to the input lead and an opposing second edge arranged adjacent to the first output lead. Further, the RF power amplifier includes a field-effect transistor integrated on the first semiconductor die. The field-effect transistor includes a gate bondpad assembly and a drain bondpad assembly. The field-effect transistor also includes a plurality of gate bondwires and a plurality of drain bondwires. In addition, the field-effect transistor includes a plurality of gate fingers extending in a first direction and a plurality of drain fingers extending in a second direction.


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