The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

May. 22, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yoshihiro Tsukahara, Tokyo, JP;

Makoto Kimura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/13 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/552 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 21/56 (2013.01); H01L 23/13 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 24/48 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/15162 (2013.01); H01L 2924/1517 (2013.01); H01L 2924/1815 (2013.01);
Abstract

A semiconductor device includes a multi-layer board which a wiring pattern and a grounding pattern are formed. A plurality of semiconductor elements are mounted on the multi-layer board. An insulating sealing member is provided on the multi-layer board and is covering the plurality of semiconductor elements. A metal film is provided on the insulating sealing member. An in-groove metal is provided in contact with a plurality of grooves extending from a side-surface upper end of the insulating sealing member to a side-surface lower end of the multi-layer board. An in-hole metal is provided in an inner wall of a hole penetrating through the insulating sealing member and is extending to the multi-layer board. The in-hole metal is contacting with the metal film and the grounding pattern.


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