The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
May. 26, 2022
Elite Semiconductor Microelectronics Technology Inc., Hsinchu, TW;
Chih-Sheng Chang, Hsinchu, TW;
Isaac Y. Chen, Hsinchu, TW;
Elite Semiconductor Microelectronics Technology Inc., Hsinchu, TW;
Abstract
An integrated circuit die forming method, for forming a plurality of integrated circuit dies on a semiconductor wafer, comprising: forming a first device, a second device in a first die in a first area; forming a metal layer connected to the first device and the second device; forming a third device, a fourth device in a second die in a second area; forming the metal layer connected to the third device and the fourth device, wherein a scribe area exists between the first area and the second area is separated by; wherein the first device and the third device are used for synchronization and are components of a class D amplifier; wherein the second device is used for preventing leakage currents of the first die and the fourth device is used for preventing leakage currents of the second die.