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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12463054 B1

PDFFull Text
Date of Patent:
Nov. 04, 2025

Filed:

Oct. 18, 2022

Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Mann Ho Cho, Seoul, KR;

Gi Hyeon Kwon, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Norman D Richards

Assistant Examiner:

Colin Russell Mccutcheon

Int. Cl.
CPC ...
H01L 21/443 (2006.01); H01L 21/02 (2006.01); H10D 48/36 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H01L 21/443 (2013.01); H01L 21/02568 (2013.01); H10D 48/362 (2025.01); H10D 62/80 (2025.01); H10D 64/62 (2025.01); H10D 99/00 (2025.01);
Abstract

A method of fabricating a semiconductor device includes forming a semiconductor layer, the semiconductor layer including a two-dimensional semiconductor material, forming a sacrificial layer on the semiconductor layer, forming a metal contact layer on the sacrificial layer, and removing the sacrificial layer. After the sacrificial layer is removed, the semiconductor layer and the metal contact layer are bonded to each other through a van der Waals bond.

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Cho, Mann. (2025). Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method (U.S. Patent No. 12463054). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12463054

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