In-memory computation device having improved drift compensation

Abstract

An in-memory computation device includes a word line activation circuit that receives an input signal indicative of input values and provides activation signals each as a function of the input value. The in-memory computation device further includes a memory array, a biasing circuit generating a bias voltage and a digital detector. The memory array has memory cells coupled to a bit line and each to a word line. Each memory cell stores a computational weight. In response to an activation signal, a cell current flows through each memory cell as a function of the bias voltage, the activation signal and the computational weight. A bit line current flows through the bit line as a function of a summation of the cell currents. The digital detector is coupled to the bit line, samples the bit line current and, in response, provides an output signal.