The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Aug. 29, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Nam Jae Lee, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/00 (2006.01); G11C 5/06 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 16/08 (2013.01); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device may include: a first gate structure including first gate lines, a first step structure including first pads, a first gap-fill insulating layer located between the first gate lines and the first step structure, and first wiring lines connecting the first gate lines and the first pads, respectively; and a second gate structure including second gate lines located on the first gate lines, a second step structure located on the first gap-fill insulating layer and including second pads, a second gap-fill insulating layer located on the first step structure, and second wiring lines connecting the second gate lines and the second pads, respectively.


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