The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Jul. 24, 2023
Applicant:

Sandisk Technologies, Inc., Milpitas, CA (US);

Inventors:

Xiaojia Jia, San Jose, CA (US);

Chin-Yi Chen, San Jose, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 13/16 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01);
U.S. Cl.
CPC ...
G06F 3/0613 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G06F 13/16 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02);
Abstract

A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines. The memory cells are disposed in strings and are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means determines data states for memory cells of at least one word line of the word lines in a pre-read. The at least one word line is adjacent to a selected word line. The control means performs reads on the selected word line for groupings of the plurality of data states in a read operation. Each of the reads including applying a data retention compensation scheme corresponding to a zone identified for a selected set of memory cells of the selected word line. The control means skips the pre-read in between each of the reads on the selected word line for each of the groupings.


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