The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Aug. 21, 2023
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Shiyun Lin, San Jose, CA (US);
Amit Khanna, Fremont, CA (US);
Ying Luo, San Diego, CA (US);
Near Margalit, Westlake Village, CA (US);
Nourhan Eid, San Jose, CA (US);
Naser Dalvand, San Jose, CA (US);
Avago Technologies International Sales Pte. Limited, Singapore, SG;
Abstract
A method for improving wafer-level optical characteristic uniformity. The method includes forming a first layer of dielectric overlying the first wafer and a second layer of dielectric overlying the second wafer. The method also includes measuring a refractive index distribution of the second layer and measuring a first thickness distribution of the first layer. The method also includes determining a second thickness distribution for the first layer based on the refractive index distribution and the first thickness distribution. The method further includes removing material nonuniformly and selectively from the first layer based on the second thickness distribution, resulting in a third layer in the second thickness distribution characterized by a spectral response with a characteristic wavelength uniformity better than +/−2.5 nm across the first wafer.