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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12457841 B1

PDFFull Text
Date of Patent:
Oct. 28, 2025

Filed:

Sep. 15, 2022

Photoelectric conversion element and photoelectric conversion device including the photoelectric conversion element

Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Hiroyuki Watanabe, Shizuoka, JP;

Akihiro Maruyama, Shizuoka, JP;

Tatsuya Yamaai, Kanagawa, JP;

Kenichi Kaku, Shizuoka, JP;

Shuntaro Watanabe, Kanagawa, JP;

Jumpei Kuno, Kanagawa, JP;

Kazunori Noguchi, Ibaraki, JP;

Takashi Anezaki, Kanagawa, JP;

Nobuhiro Nakamura, Tokyo, JP;

Kohei Makisumi, Shizuoka, JP;

Assignee:

Canon Kabushiki Kaisha, Tokyo, JP;

Attorney:

Canon U.S.A., Inc. IP Division

Primary Examiner:

Lindsey A Buck

Int. Cl.
CPC ...
H10K 30/85 (2023.01); H01G 9/20 (2006.01); H10K 30/30 (2023.01); H10K 30/50 (2023.01); H10K 30/81 (2023.01); H10K 30/82 (2023.01); H10K 30/84 (2023.01); H10K 30/86 (2023.01); H10K 30/87 (2023.01); H10K 85/10 (2023.01); H10K 85/30 (2023.01); H10K 85/50 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 30/85 (2023.02); H10K 30/30 (2023.02); H10K 30/50 (2023.02); H10K 30/84 (2023.02); H10K 30/86 (2023.02); H10K 30/87 (2023.02); H10K 85/111 (2023.02); H10K 85/141 (2023.02); H10K 85/30 (2023.02); H10K 85/50 (2023.02); H10K 85/654 (2023.02); H10K 85/6572 (2023.02); H01G 9/2009 (2013.01); H10K 30/81 (2023.02); H10K 30/82 (2023.02);
Abstract

The present disclosure provides a photoelectric conversion element including a first electrode, a second electrode, a photoelectric conversion layerbetween the first electrodeand the second electrode, and a reflection layerbetween one of the first electrodeand the second electrodeand the photoelectric conversion layer. The wavelength at which the reflectance of the reflection layeris maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layeris ⅕ or more of the maximum optical absorption coefficient in the visible region.

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