The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jul. 03, 2025
Industry-academic Cooperation Foundation, Kunsan National University, Gunsan-si, KR;
Jung Yup Yang, Gunsan-si, KR;
Hyojung Kim, Incheon, KR;
Abstract
A halide perovskite thin film semiconductor device according to an embodiment of the present invention includes: a substrate; a halide perovskite layer formed on an upper surface side of the substrate; a two-dimensional material layer formed on the halide perovskite layer; an electrode unit disposed on the halide perovskite layer and including a drain electrode and a source electrode; and a polymer layer formed on the two-dimensional material layer and the electrode unit, wherein the two-dimensional material layer is characterized by being manufactured by being stacked on the halide perovskite layer by a dry transfer method.