The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Dec. 30, 2022
Applicant:

University of Seoul Industry Cooperation Foundation, Seoul, KR;

Inventor:

Hyeok Kim, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10K 10/23 (2023.01); H10K 71/60 (2023.01); H10K 85/60 (2023.01);
U.S. Cl.
CPC ...
H10K 10/23 (2023.02); H10K 71/60 (2023.02); H10K 85/60 (2023.02); H10K 85/6576 (2023.02);
Abstract

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2',3′-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm·V·s) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to CuO. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.


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