The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Aug. 08, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyung Rae Cha, Seoul, KR;

Dae Hyun Kim, Hwaseong-si, KR;

Dong Uk Kim, Hwaseong-si, KR;

Dong Kyun Seo, Asan-si, KR;

Young Chul Sim, Pyeongtaek-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/84 (2025.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/84 (2025.01); H01L 25/167 (2013.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 2224/24051 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/245 (2013.01); H01L 2224/25175 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/0549 (2013.01); H01L 2924/12041 (2013.01); H10H 20/018 (2025.01); H10H 20/034 (2025.01);
Abstract

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.


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