The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Mar. 20, 2023
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Daiki Yasuda, Tokyo, JP;
Hiromi Fujita, Tokyo, JP;
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Abstract
Provided is an infrared optical device that is easy to produce and has high performance. The infrared optical device having a peak at a center wavelength λ includes: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer, an active layer, a p-type semiconductor layer, and a first electrode layer formed on the semiconductor substrate in stated order. The first reflecting layer and the p-type semiconductor layer are directly connected to the active layer. The first reflecting layer is constructed through layering of a low-refractive-index layer that is an n-type semiconductor layer and a high-refractive-index layer. The low-refractive-index layer is placed closest to the active layer in the first reflecting layer. The active layer and the p-type semiconductor layer each have a higher refractive index than the low-refractive-index layer. The center wavelength λ is 7 μm or more at room temperature.