The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Oct. 24, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Miseon Park, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/807 (2025.01); H10F 39/182 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01);
Abstract

An image sensor includes a pixel division structure including a core and a lateral pattern structure on a sidewall of the core, the pixel division structure extending through a substrate in a vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions including unit pixels. The image sensor includes a light sensing element in each of the unit pixel regions, a planarization layer on the substrate, a color filter array layer on the planarization layer, the color filter array layer including color filters, and a microlens on the color filter array layer. The lateral pattern structure includes a second lateral pattern on the sidewall of the core and a first lateral pattern on an outer sidewall of the second lateral pattern, the first lateral pattern includes silicon oxide, and the second lateral pattern includes silicon nitride containing carbon.


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