The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Mar. 04, 2022
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yosuke Satake, Tokyo, JP;

Tomoyuki Arai, Kanagawa, JP;

Naohiro Takahashi, Kanagawa, JP;

Koichiro Zaitsu, Kanagawa, JP;

Akira Matsumoto, Kanagawa, JP;

Keiji Nishida, Kanagawa, JP;

Mizuki Nishida, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
H10F 39/802 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01);
Abstract

There is provided an imaging device including a semiconductor substrate and a plurality of imaging elements that are arrayed in a matrix in a first direction and a second direction on the semiconductor substrate and perform photoelectric conversion on incident light. Each of the plurality of imaging elements includes a plurality of pixels that are provided in a predetermined unit region of the semiconductor substrate to be adjacent to each other and contains impurities of a first conductivity type, a separation section that separates the plurality of pixels, two first element separation walls that are provided along two first side surfaces extending in the second direction of the predetermined unit region to pierce through at least a part of the semiconductor substrate, and a first diffusion region provided in the semiconductor substrate around the first element separation wall and the separation section and containing impurities of a second conductivity type.


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