The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jun. 29, 2021
Boe Technology Group Co., Ltd., Beijing, CN;
Fuqiang Li, Beijing, CN;
Zhen Zhang, Beijing, CN;
Zhenyu Zhang, Beijing, CN;
Lizhong Wang, Beijing, CN;
Ce Ning, Beijing, CN;
Yunping Di, Beijing, CN;
Zheng Fang, Beijing, CN;
Jiahui Han, Beijing, CN;
Chenyang Zhang, Beijing, CN;
Yawei Wang, Beijing, CN;
Chengfu Xu, Beijing, CN;
Beijing BOE Technology Development Co., Ltd., Beijing, CN;
Abstract
Disclosed are a thin film transistor and a manufacturing method therefor, a displaying base plate and a displaying apparatus. The thin film transistor includes an active layer, a first insulating layer and a gate layer which are disposed in stack, wherein the active layer includes a source contact area, a drain contact area, and a channel area connecting the source contact area and the drain contact area; the channel area includes a first channel area, a first resistance area and a second channel area sequentially disposed in a first direction; the gate layer includes a first gate and a second gate which are separately disposed; an orthographic projection of the first gate on a plane where the active layer is located covers the first channel area; and an orthographic projection of the second gate on a plane where the active layer is located covers the second channel area.