The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Feb. 09, 2022
Applicant:
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Inventors:
Blend Mohamad, Grenoble, FR;
René Escoffier, Grenoble, FR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/01 (2025.01); H10D 64/516 (2025.01); H10D 64/518 (2025.01); H10D 64/258 (2025.01);
Abstract
A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.