The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
May. 09, 2024
Max-planck-gesellschaft Zur Förderung Der Wissenschaften E.v., Munich, DE;
Alexander Bähr, Gröbenzell, DE;
Peter Lechner, Holzkirchen, DE;
Jelena Ninkovic, Munich, DE;
Rainer Richter, Munich, DE;
Florian Schopper, Munich, DE;
Johannes Treis, Munich, DE;
Abstract
The invention relates to a DEPFET comprising: a semiconductor substrate () of a first conduction type, which has a first main surface () and a second main surface (), which are opposite one another; a source terminal region () of a second conduction type on the first main surface (); a drain terminal region () of a second conduction type; a channel region (), which is arranged between the source terminal region () and the drain terminal region (); a gate electrode (), which is separated from the channel region () by a gate insulator (); a rear activation region () of a second conduction type, which is formed on the second main surface (); and a substrate doping increase region () of a first conduction type, which is formed at least under the source terminal region () and under the channel region (), the substrate doping increase region () having a signal charge control region () of the first conduction type below the gate electrode (), in which signal charge control region the effective doping dose has a higher value than at other points of the substrate doping increase region () below the gate electrode.