The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Feb. 17, 2021
Waseda University, Tokyo, JP;
Waseda University, Tokyo, JP;
Abstract
Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C—Si bonds in order to reduce an interface state density, and a method for producing the same. A FETA includes a silicon oxide filmA formed on a surface of a non-doped diamond layerA, a non-doped diamond layerA formed on a surface of the non-doped diamond layerA using the silicon oxide filmA as a mask, a silicon-terminated layerA formed at an interface between the non-doped diamond layerA and the silicon oxide filmA and at an interface between the non-doped diamond layerA and the silicon oxide filmA, and a gate electrodeA formed on the silicon oxide filmA. The FETA operates using the silicon oxide filmA and an insulating filmA formed on the silicon oxide filmA as a gate insulating filmA and using the non-doped diamond layerA as each of a source region and a drain region.