The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Feb. 15, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yumin Kim, Suwon-si, KR;
Jooheon Kang, Suwon-si, KR;
Sunho Kim, Suwon-si, KR;
Seyun Kim, Suwon-si, KR;
Garam Park, Suwon-si, KR;
Hyunjae Song, Suwon-si, KR;
Dongho Ahn, Suwon-si, KR;
Seungyeul Yang, Suwon-si, KR;
Myunghun Woo, Suwon-si, KR;
Jinwoo Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.