The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Apr. 07, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyemin Yoo, Suwon-si, KR;

Woosung Yang, Hwaseong-si, KR;

Sukkang Sung, Seongnam-si, KR;

Ahreum Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/40 (2023.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H10B 43/27 (2023.02);
Abstract

A semiconductor device includes a first structure having first and second memory regions, an extension region therebetween, and word lines; and a second structure having a circuit region overlapping the extension region. The word lines include first and second common word lines at different levels, and first and second intermediate individual word lines at a same level and spaced apart. Each of the first and second common word lines are in the first and second memory regions and the extension region. The first intermediate individual word line is in the first memory region and extends into the extension region at a level between the first and second common word lines. The second intermediate individual word line is in the second memory region and extends into the extension region. The circuit region includes pass transistors connected to the word lines. A pass transistor overlaps the word lines in the extension region.


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