The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12457745 B1

Date of Patent:

Oct. 28, 2025

Filed:

Aug. 01, 2022

Semiconductor memory device

Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Yusuke Okumura, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Michele Fan

Int. Cl.

CPC ...

H10B 41/50 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/50 (2023.01);

U.S. Cl.

CPC ...

H10B 43/35 (2023.02); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);

Abstract

According to one embodiment, a semiconductor memory device includes a plurality of conductive layers, each of the plurality of conductive layers including a first portion, and a second portion that is thicker than the first portion, a first insulator portion that contacts the second portion of a first conductive layer and the second portion of a second conductive layer, and a second insulator portion that contacts the second portion of a third conductive layer, wherein the second portion of the second conductive layer includes a first sub portion arranged with the second portion of the first conductive layer, and a second sub portion provided between the second portion of the first conductive layer and the second portion of the third conductive layer.

Find Patent Forward Citations

Okumura, Yusuke. (2025). Semiconductor memory device (U.S. Patent No. 12457745). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12457745

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile