The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Mar. 10, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Ryota Fujitsuka, Yokkaichi, JP;

Ryota Suzuki, Yokkaichi, JP;

Kenta Yamada, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor storage device includes a first stack including a plurality of first electrode films stacked in a first direction. A second stack is provided above the first stack and includes a plurality of second electrode films that are stacked in the first direction. A first column portion is provided in the first stack to extend in the first direction and includes a first charge storage film and a first semiconductor layer. A second column portion is provided in the second stack to extend in the first direction and includes a second charge storage film and a second semiconductor layer. A connecting portion is provided between the first column portion and the second column portion, divides the first charge storage film and the second charge storage film from each other, and is configured to electrically connect the first semiconductor layer and the second semiconductor layer to each other.


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