The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Oct. 11, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Takamasa Ito, Nagoya, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H10B 43/27 (2023.02);
Abstract

According to an embodiment, a semiconductor memory device includes a first conductive layer and second conductive layers arranged at intervals in a first direction above the first conductive layer. A semiconductor layer extends in the first direction in the second conductive layers to be in contact with the first conductive layer. A charge storage layer is between the semiconductor layer and the second conductive layers. A metal layer extends in the first direction and a second direction above the first conductive layer, and separates the second conductive layers. The device further includes an insulating layer. The insulating layer includes a portion between the metal layer and the first conductive layer and a portion between the metal layer and the second conductive layers.


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