The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Aug. 11, 2020
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 5/10 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); G11C 5/10 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract
A memory device occupying a small area is provided. In a memory cell including a reading transistor, a writing transistor, and a capacitor, the writing transistor is provided above the reading transistor. Alternatively, the reading transistor is provided above the writing transistor. An oxide semiconductor is used for a semiconductor layer where a channel of the writing transistor is formed. An oxide semiconductor is used for a semiconductor layer where a channel of the reading transistor is formed. Memory cells are arranged in a matrix.