The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jul. 11, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jhen-Yu Tsai, Kaohsiung, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H10B 12/34 (2023.02);
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming a trench in a substrate and disposing a lower gate electrode in the trench. The method also includes disposing a first dielectric layer on the lower gate electrode in the trench and partially removing the first dielectric layer to expose a portion of the lower gate electrode.