The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Aug. 10, 2022
Applicants:

Ams Sensors Usa Inc., Plano, TX (US);

Ams Sensors Belgium Bvba, Berchem, BE;

Inventors:

Denver Lloyd, Boise, ID (US);

Scott Johnson, Boise, ID (US);

Adi Xhakoni, Kessel Lo, BE;

Assignees:

ams Sensors USA Inc., Plano, TX (US);

ams Sensors Belgium BVBA, Berchem, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/59 (2023.01); H04N 25/53 (2023.01); H04N 25/531 (2023.01); H04N 25/583 (2023.01); H04N 25/585 (2023.01); H04N 25/616 (2023.01); H04N 25/62 (2023.01); H04N 25/703 (2023.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H04N 25/59 (2023.01); H04N 25/53 (2023.01); H04N 25/531 (2023.01); H04N 25/583 (2023.01); H04N 25/585 (2023.01); H04N 25/616 (2023.01); H04N 25/62 (2023.01); H04N 25/703 (2023.01); H04N 25/75 (2023.01); H04N 25/778 (2023.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01);
Abstract

In an embodiment a method for operating a pixel arrangement includes, during an exposure period, accumulating, by a photodetector, in a first integration period, charge carriers, pulsing, at an end of the first integration period, a transfer transistor to a first voltage level for transferring a portion of the accumulated charge carriers to a diffusion node, wherein the portion is configured to be drained to a supply voltage, continuing, by the photodetector, to accumulate, in a second integration period, charge carriers, after the second integration period, pulsing the transfer transistor to a respective further voltage level with at least one additional pulse, wherein, with each additional pulse, an additional portion of the accumulated charge carriers is configured to be drained to the supply voltage, and wherein each additional pulse is followed by an additional continued accumulation of charge carriers in a respective additional integration period with the photodetector.


Find Patent Forward Citations

Loading…