The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
May. 05, 2021
Ferdinand-braun-institut Ggmbh Leibniz-institut Für Höchstfrequenztechnik, Berlin, DE;
Sascha Krause, Berlin, DE;
Abstract
A circuit arrangement for limiting the gate current at a field effect transistor, FET, comprises a first FET and a DC supply network connected to a gate terminal of the first FET; wherein the supply network provides a voltage Vgg to the gate terminal of the first FET via a first connection comprising a high impedance resistor Rand a second FET connected in series therewith and having a gate terminal; the second FET having an ON state at a gate-source voltage of 0 V and having its gate terminal also connected to the gate terminal of the first FET via a second connection in parallel with the resistor R; wherein a voltage drop occurring across the resistor Rresults in increasing blocking of the second FET.