The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Nov. 30, 2023
Applicant:
Ancora Semiconductors Inc., Taoyuan, TW;
Inventors:
Hong-Sheng Wang, Taoyuan, TW;
Chang-Jing Yang, Taoyuan, TW;
Wei-Hsiang Chao, Taoyuan, TW;
Ying-Chen Liu, Taoyuan, TW;
Assignee:
ANCORA SEMICONDUCTORS INC., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01);
Abstract
A clamp circuit is provided. The clamp circuit includes a major Gallium Nitride (GaN) transistor, a miller GaN transistor, and a capacitor circuit. The major GaN transistor () includes a major gate, a major drain, and a major source coupled to a first node. The miller GaN transistor includes a miller gate coupled to a second node, a miller drain coupled to the major gate, and a miller source coupled to the first node. The capacitor circuit is coupled between the major drain and the second node.