The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Sep. 07, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventor:

Katsuya Kato, Yokkaichi, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); G03F 7/0002 (2013.01); G03F 7/707 (2013.01); G03F 7/70716 (2013.01);
Abstract

An array of alignment marks can be formed in a substrate, and at least one material portion can be deposited and patterned. A photoresist material layer can be deposited and patterned to provide a kerf-region photoresist material portion. The overlay between the kerf-region photoresist material portion and a proximal alignment mark is measured employing a ultraviolet radiation that is focused at a focal plane located at or near a top surface of the kerf-region photoresist material portion.


Find Patent Forward Citations

Kato, Katsuya. (2025). Method for dual wavelength overlay measurement with focus at a photoresist top surface and apparatus for using same (U.S. Patent No. 12456693). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12456693

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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