The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jun. 12, 2023
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tse-Yao Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/3205 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53271 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01); H01L 21/32055 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01);
Abstract

A semiconductor device structure includes a first lower semiconductor structure disposed over a semiconductor substrate. The first lower semiconductor structure has a first sidewall and a second sidewall opposite to the first sidewall. The semiconductor device structure also includes a first upper semiconductor structure covering a top surface and the first sidewall of the first lower semiconductor structure. The first lower semiconductor structure and the first upper semiconductor structure include different materials. The semiconductor device structure further includes a first oxide portion disposed over the semiconductor substrate and extending along the second sidewall of the first lower semiconductor structure. The first oxide portion has an L-shape.


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