The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jul. 05, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Se Ra Hwang, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01L 21/76829 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/50 (2023.02);
Abstract
A semiconductor device includes: a dielectric structure in which etch stop structures and low-k layers are alternately stacked over a substrate; and a metal interconnection electrically connected to the substrate in the dielectric structure, wherein each one of the etch stop structures includes: a first etch stop layer including a hydrogen blocking material; and a second etch stop layer formed over the first etch stop layer.