The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
May. 01, 2023
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Hyung Jin Choi, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/14 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01); G11C 16/3445 (2013.01);
Abstract
In a semiconductor memory device, a program voltage is applied to select lines, which are coupled to corresponding select transistors included in a plurality of string groups. A verify operation on the select transistors is then performed, which simultaneously checks the operation of first select transistors included in a first string group and second select transistors included in a second string group.