The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jul. 27, 2023
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Yeong Jo Mun, Gyeonggi-do, KR;

Dong Hun Kwak, Gyeonggi-do, KR;

Se Chun Park, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/34 (2013.01); G11C 16/3418 (2013.01); G11C 16/3459 (2013.01);
Abstract

A memory device includes: a memory block including a plurality of memory cells; a peripheral circuit for performing a program operation on selected memory cells among the plurality of memory cells; and a control logic for controlling the program operation of the peripheral circuit. The control logic controls the peripheral circuit to perform a foggy program operation on first memory cells connected to a first word line among the plurality of memory cells, perform a foggy program operation on second memory cells connected to a second word line adjacent to the first word line among the plurality of memory cells, and perform a fine program operation on the first memory cells, based on a target program state of the second memory cells.


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