The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Dec. 14, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H10B 53/30 (2023.02); H10B 61/00 (2023.02); H10B 63/80 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 70/063 (2023.02); H10N 70/826 (2023.02);
Abstract

A semiconductor device and formation thereof. The semiconductor device includes a memory device located on top of a first bottom interconnect, wherein the first bottom interconnect is embedded in a first dielectric layer. The semiconductor device further includes a second bottom interconnect embedded in the first dielectric layer, wherein the second bottom interconnect is adjacent to the first bottom interconnect. A top surface of the second bottom interconnect is recessed relative to a top surface of the first bottom interconnect.


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