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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12453243 B1

PDFFull Text
Date of Patent:
Oct. 21, 2025

Filed:

Apr. 30, 2024

Organic light emitting diode display device

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventor:

Wei Yang, Beijing, CN;

Assignee:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

Attorney:

Chiwin Law LLC

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H10K 59/121 (2023.01); H01L 27/12 (2006.01); H10K 59/12 (2023.01); H10K 77/10 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H10K 77/111 (2023.02); H10D 30/0314 (2025.01); H10D 30/0321 (2025.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/0212 (2025.01); H10D 86/0221 (2025.01); H10D 86/411 (2025.01); H10D 86/423 (2025.01); H10D 86/471 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H10K 59/1201 (2023.02); H10K 2102/311 (2023.02);
Abstract

An organic light emitting diode display device are provided. The organic light emitting diode display device includes: a substrate; a barrier layer, located on a side of the substrate; a first buffer layer, located on a side of the barrier layer; a first semiconductor layer, located on a side of the first buffer layer; a first gate insulating layer, located on a side of the first semiconductor layer; a first gate electrode, located on a side of the first gate insulating layer; a second buffer layer, located on a side of the first gate electrode; a second semiconductor layer, located on a side of the second buffer layer; a second gate insulating layer, located on a side of the second semiconductor layer; a second gate electrode, located on a side of the second gate insulating layer.

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