The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Oct. 30, 2020
Applicant:
Sharp Kabushiki Kaisha, Sakai, JP;
Inventor:
Tamotsu Sakai, Sakai, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Sakai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10K 59/1201 (2023.02); H10K 59/1213 (2023.02); H10D 86/421 (2025.01); H10D 86/60 (2025.01);
Abstract
A semiconductor layer of a drive transistor includes a first channel region, and a first doped region and a second doped region that are doped with an impurity, the first doped region adjacent to the first channel region is constituted by a high concentration region, and the second doped region is constituted by a low concentration region adjacent to the first channel region and a high concentration region adjacent to the low concentration region, and a drive current flows from the first doped region to the second doped region in a light emission period of a light-emitting element.