The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jun. 21, 2022
Applicants:

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jingwen Feng, Beijing, CN;

Maocheng Jiang, Beijing, CN;

Yichi Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 50/115 (2023.01); C09K 11/88 (2006.01); H10K 50/15 (2023.01); B82Y 20/00 (2011.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/115 (2023.02); C09K 11/883 (2013.01); H10K 50/15 (2023.02); B82Y 20/00 (2013.01); H10K 2102/3026 (2023.02); H10K 2102/351 (2023.02);
Abstract

A blue top emitting quantum dot light-emitting device and a display apparatus are disclosed. The blue top emitting quantum dot light-emitting device includes: a cathode and an anode oppositely arranged, a blue quantum dot light-emitting layer between the cathode and the anode, an electron transport layer between the cathode and the blue quantum dot light-emitting layer, and a hole transport layer between the blue quantum dot light-emitting layer and the anode; where: a material of the blue quantum dot light-emitting layer is ZnSe:Te/ZnSe/ZnS, ZnSe:Temeans that a molar ratio of Se to Te is 1-:x, and x is 0.03 to 0.07; a thickness of the hole transport layer is 10 nm to 35 nm, a thickness of the electron transport layer is 25 nm to 50 nm, and a sum of thicknesses of the hole transport layer and the electron transport layer is 55 nm to 65 nm.


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