The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Jul. 30, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Ivar Tangring, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/858 (2025.01); H10H 20/819 (2025.01); H10H 20/84 (2025.01); H10H 20/851 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8581 (2025.01); H10H 20/819 (2025.01); H10H 20/84 (2025.01); H10H 20/851 (2025.01); H10H 20/034 (2025.01); H10H 20/0361 (2025.01); H10H 20/0365 (2025.01);
Abstract

In an embodiment a component includes a semiconductor body, a converter layer, a filling layer and an intermediate layer arranged in a vertical direction between the semiconductor body and the converter layer, wherein the semiconductor body has a surface which faces the converter layer, is structured and has vertical recesses, wherein the vertical recesses are filled with a material of the filling layer that has a higher thermal conductivity than silicone, wherein the intermediate layer or the semiconductor body has a higher mechanical hardness than the filling layer, and wherein the structured surface of the semiconductor body has local elevations and local recesses, the structured surface including exclusively the surface of an n-type or a p-type semiconductor layer.


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