The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Dec. 24, 2020
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
David Vaufrey, Grenoble, FR;
Corentin Le Maoult, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/84 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10H 20/01 (2025.01); H10F 30/21 (2025.01);
U.S. Cl.
CPC ...
H10H 20/84 (2025.01); H10D 8/00 (2025.01); H10D 8/043 (2025.01); H10D 8/411 (2025.01); H10H 20/01 (2025.01); H10F 30/21 (2025.01); H10H 20/034 (2025.01);
Abstract
A diode includes a stack of semiconductor layers and an active area arranged within the stack. The stack includes a lateral surface. The diode includes a first passivation layer and a second passivation layer, the first passivation layer being in contact with the lateral surface, and the second passivation layer being in contact with the lateral surface. The second passivation layer is formed partially on the first passivation layer.
Quick Actions:
Vaufrey, David. (2025). Diode comprising at least two passivation layers, in particular formed of dielectrics, which are locally stacked to optimise passivation (U.S. Patent No. 12453216). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12453216
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile