The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

May. 12, 2023
Applicant:

Korea Photonics Technology Institute, Gwangju, KR;

Inventor:

Hyo Jin Kim, Gwangju, KR;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 71/00 (2025.01); H10F 10/163 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 77/1437 (2025.01); H10F 71/127 (2025.01); H10F 71/1395 (2025.01); H10F 77/124 (2025.01); H10F 77/311 (2025.01); Y02E 10/544 (2013.01);
Abstract

Disclosed is a method of manufacturing a III-V group nanorod solar cell so that a substrate can be reused. The method may includes a first growth process of forming an etch stop layer on a substrate, a second growth process of growing a sacrificial layer on the etch stop layer, a third growth process of forming, on the sacrificial layer, a pattern layer including an opening at each location at which each nanorod solar cell is able to be grown, a fourth growth process of growing the nanorod solar cells on the sacrificial layer through the openings within the pattern layer, a forming process of forming a solar cell protection layer on outsides of the nanorod solar cells, a first etching process of etching the sacrificial layer and the pattern layer, and a second etching process of etching the etch stop layer.


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