The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Oct. 19, 2023
Applicant:
Sony Group Corporation, Tokyo, JP;
Inventors:
Assignee:
Sony Group Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/44 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/80373 (2025.01); G01J 1/44 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/182 (2025.01); H10F 39/1825 (2025.01); H10F 39/199 (2025.01); H10F 39/8023 (2025.01); H10F 39/8033 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01); H10F 39/812 (2025.01); H10F 39/813 (2025.01); G01J 2001/448 (2013.01);
Abstract
There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.