The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Mar. 11, 2022
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Yuta Nakamoto, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
Noise is reduced. A solid-state imaging device includes a photoelectric conversion unit that generates charge corresponding to an amount of received light, a transfer unit that transfers the charge generated by the photoelectric conversion unit, a charge storage unit that stores the charge transferred by the transfer unit, an amplifying transistor that amplifies a signal corresponding to the charge stored in the charge storage unit, and an isolation portion that isolates the photoelectric conversion unit, the amplifying transistor has a gate electrode including two vertical gate electrode portions provided in a depth-wise direction from a first surface of a semiconductor layer to sandwich a channel region therebetween, the isolation portion includes at least a first isolation portion provided in a first groove provided in the depth-wise direction from the first surface, and an insulating layer provided on a side of one of the two vertical gate electrode portions opposite to the channel region is provided to overlap at least a part of the first isolation portion when viewed in the depth-wise direction.