The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Nov. 05, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a novel structure is provided. The semiconductor device includes a memory circuit including a first transistor and a second transistor. The first transistor is formed on a silicon substrate. The second transistor is formed in a layer above a layer where the first transistor is provided. The first transistor includes a first gate electrode and a first back gate electrode with a first channel formation region interposed therebetween. The first gate electrode is electrically connected to one of a source and a drain of the second transistor. The first back gate electrode is formed using a region where an impurity element imparting a conductivity type is selectively introduced in the silicon substrate. The second transistor includes a second channel formation region. The second channel formation region includes a metal oxide.