The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jul. 11, 2022
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/40 (2025.01); H10D 30/67 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10D 86/423 (2025.01); H10D 30/6723 (2025.01); H10D 30/6755 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/1315 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 59/1201 (2023.02); H10K 59/131 (2023.02);
Abstract
Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.