The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

Apr. 12, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myung-Dong Ko, Hwaseong-si, KR;

Keon Yong Cheon, Yongin-si, KR;

Dong Won Kim, Seongnam-si, KR;

Hyun Suk Kim, Suwon-si, KR;

Sang Hyeon Lee, Gwangju-si, KR;

Hyung Suk Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/28 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 89/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H01L 21/28123 (2013.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 62/121 (2025.01); H10D 84/0135 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/832 (2025.01); H10D 89/10 (2025.01);
Abstract

A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on the first and second active patterns and extending in the second direction; a first gate separation structure between the first and second active patterns, extending in the first direction, and separating the gate electrodes; and a first element separation structure between the gate electrodes, extending in the second direction, and separating the second active pattern, wherein a distance to a first side of a first portion of the first gate separation structure is smaller than a distance to the first side of a second portion of the first gate separation structure, and a distance to the second side of the first portion is smaller than a distance from the second active pattern to the second side of the second portion.


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