The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jan. 30, 2023
Applicant:
Hitachi Energy Ltd, Zürich, CH;
Inventors:
Giovanni Alfieri, Möriken, CH;
Gianpaolo Romano, Baden, CH;
Assignee:
HITACHI ENERGY LTD, Zurich, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/04 (2006.01); H10D 62/832 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H01L 21/0475 (2013.01); H10D 64/027 (2025.01);
Abstract
A method for producing a power semiconductor device comprises providing a semiconductor body based on SiC, irradiating at least a first portion of a top side of the semiconductor body with low-energy electron radiation, and producing an electrical insulation layer at least in the at least one irradiated first portion.